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Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

Silicon microspheres heated to around 800 °C produce pronounced near-infrared thermal emission peaks associated with high-quality Mie resonances, reaching an experimental Q factor of 400.

Authors
R. Fenollosa, F. Ramiro-Manzano, M. Garín and R. Alcubilla

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